IPI50N10S3L16AKSA1
MOSFET N-CH 100V 50A TO262-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies' OptiMOS™ series MOSFET, part number IPI50N10S3L16AKSA1, is an N-channel power MOSFET designed for demanding applications. This component features a Drain-Source Voltage (Vdss) of 100V and a continuous Drain Current (Id) of 50A at 25°C (Tc). With a maximum Power Dissipation of 100W (Tc) and a low On-Resistance (Rds On) of 15.7mOhm at 50A and 10V, it offers efficient power handling. The device supports gate drive voltages from 4.5V to 10V, with a maximum gate-source voltage of ±20V. Key parameters include a maximum Gate Charge (Qg) of 64 nC at 10V and an Input Capacitance (Ciss) of 4180 pF at 25V. The IPI50N10S3L16AKSA1 is packaged in a PG-TO262-3 configuration with long leads, suitable for through-hole mounting. Its operating temperature range is -55°C to 175°C (TJ). This MOSFET is commonly utilized in power supply units, automotive electronics, and industrial motor control systems.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 50A (Tc) |
| Rds On (Max) @ Id, Vgs | 15.7mOhm @ 50A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 100W (Tc) |
| Vgs(th) (Max) @ Id | 2.4V @ 60µA |
| Supplier Device Package | PG-TO262-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 64 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4180 pF @ 25 V |
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