IPI50CN10NGHKSA1
MOSFET N-CH 100V 20A TO262-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies OptiMOS™ IPI50CN10NGHKSA1 is an N-Channel Power MOSFET designed for demanding applications. This device features a drain-source breakdown voltage (Vdss) of 100V and a continuous drain current (Id) of 20A at 25°C (Tc). The low on-resistance (Rds On) is rated at 50mOhm maximum at 20A and 10V gate-source voltage. Key characteristics include a gate charge (Qg) of 16 nC maximum at 10V and input capacitance (Ciss) of 1090 pF maximum at 50V. The component operates within a temperature range of -55°C to 175°C (TJ) and has a maximum power dissipation of 44W (Tc). Packaged in a PG-TO262-3 (TO-262-3 Long Leads) for through-hole mounting, this MOSFET is suitable for power supplies, industrial motor control, and automotive applications.
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 20A (Tc) |
| Rds On (Max) @ Id, Vgs | 50mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 44W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 20µA |
| Supplier Device Package | PG-TO262-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 16 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1090 pF @ 50 V |
Request a Quote
Clients Also Buy
BSS308PEH6327XTSA1
MOSFET P-CH 30V 2A SOT23-3
BSZ086P03NS3EGATMA1
MOSFET P-CH 30V 13.5A/40A TSDSON
BSL606SNH6327XTSA1
MOSFET N-CH 60V 4.5A TSOP-6
