IPI47N10S33AKSA1
MOSFET N-CH 100V 47A TO262-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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The Infineon Technologies IPI47N10S33AKSA1 is an N-Channel SIPMOS® MOSFET designed for high-performance applications. This component features a drain-source voltage (Vdss) of 100 V and a continuous drain current (Id) of 47 A at 25°C, with a maximum power dissipation of 175 W (Tc). The Rds On is specified as 33 mOhm at 33 A and 10 V, with a gate-source voltage (Vgs) operating range of ±20V. Key parameters include a gate charge (Qg) of 105 nC at 10 V and an input capacitance (Ciss) of 2500 pF at 25 V. This device is housed in a PG-TO262-3 package, suitable for through-hole mounting. The operating temperature range is from -55°C to 175°C (TJ). This MOSFET is utilized across various industries including automotive and industrial power control systems.
Additional Information
Series: SIPMOS®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 39 week(s)Product Status: Not For New DesignsPackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 47A (Tc) |
| Rds On (Max) @ Id, Vgs | 33mOhm @ 33A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 175W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 2mA |
| Supplier Device Package | PG-TO262-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 105 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2500 pF @ 25 V |
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