IPI45P03P4L11AKSA1
MOSFET P-CH 30V 45A TO262-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ P-channel MOSFET, part number IPI45P03P4L11AKSA1, features a 30V drain-source voltage and a continuous drain current of 45A at 25°C. This device offers a low on-resistance of 11.1mOhm at 45A and 10V Vgs. The P-channel MOSFET is housed in a PG-TO262-3 package with through-hole mounting. Key parameters include a gate charge of 55nC at 10V and input capacitance of 3770pF at 25V. Maximum power dissipation is rated at 58W. This component is suitable for applications in automotive and industrial power management. The operating temperature range is -55°C to 175°C.
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 45A (Tc) |
| Rds On (Max) @ Id, Vgs | 11.1mOhm @ 45A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 58W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 85µA |
| Supplier Device Package | PG-TO262-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | +5V, -16V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 55 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3770 pF @ 25 V |
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