IPI45N06S4L08AKSA3
MOSFET N-CHANNEL_55/60VManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ IPI45N06S4L08AKSA3 is a 60V N-Channel power MOSFET. This device offers a low on-resistance of 8.2mOhm at 45A and 10V Vgs, facilitating efficient power switching. Key parameters include a continuous drain current of 45A (Tc) and a maximum power dissipation of 71W (Tc). The MOSFET features a gate charge (Qg) of 64 nC at 10V and an input capacitance (Ciss) of 4780 pF at 25V. Designed for demanding applications, it operates across a temperature range of -55°C to 175°C (TJ). The component is qualified to AEC-Q101 standards, making it suitable for automotive applications. It is supplied in a PG-TO262-3-1 package, a through-hole mounting type. This technology is commonly employed in automotive power management and control systems.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 45A (Tc) |
| Rds On (Max) @ Id, Vgs | 8.2mOhm @ 45A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 71W (Tc) |
| Vgs(th) (Max) @ Id | 2.2V @ 35µA |
| Supplier Device Package | PG-TO262-3-1 |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 64 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4780 pF @ 25 V |
| Qualification | AEC-Q101 |
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