IPI45N06S409AKSA2
MOSFET N-CH 60V 45A TO262-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ IPI45N06S409AKSA2 is an N-Channel Power MOSFET designed for high-performance applications. This device features a drain-source voltage (Vdss) of 60V and a continuous drain current (Id) capability of 45A at 25°C (Tc). With a low on-resistance (Rds On) of 9.4mOhm at 45A and 10V, it minimizes conduction losses. The gate charge (Qg) is specified at a maximum of 47nC at 10V, facilitating efficient switching. The component offers a maximum power dissipation of 71W (Tc) and operates within a temperature range of -55°C to 175°C (TJ). Packaged in a PG-TO262-3-1 (TO-262-3 Long Leads), this AEC-Q101 qualified MOSFET is suitable for automotive and industrial power management systems.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 45A (Tc) |
| Rds On (Max) @ Id, Vgs | 9.4mOhm @ 45A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 71W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 34µA |
| Supplier Device Package | PG-TO262-3-1 |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 47 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3785 pF @ 25 V |
| Qualification | AEC-Q101 |
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