IPI320N20N3GAKSA1
MOSFET N-CH 200V 34A TO262-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ IPI320N20N3GAKSA1 is an N-Channel Power MOSFET designed for high-performance applications. This component features a 200 V Drain-Source Voltage (Vdss) and a continuous drain current of 34A (Tc) at 25°C. With a maximum power dissipation of 136W (Tc), it is suitable for demanding power management tasks. The Rds On is specified at a low 32mOhm at 34A and 10V gate drive. Key parameters include a gate charge (Qg) of 29 nC @ 10 V and input capacitance (Ciss) of 2350 pF @ 100 V. Packaged in a PG-TO262-3 configuration with long leads, this through-hole device operates across a wide temperature range of -55°C to 175°C (TJ). This MOSFET is commonly utilized in industrial power supplies, electric vehicle charging, and solar inverters.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 34A (Tc) |
| Rds On (Max) @ Id, Vgs | 32mOhm @ 34A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 136W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 90µA |
| Supplier Device Package | PG-TO262-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 29 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2350 pF @ 100 V |