IPI26CN10N G
MOSFET N-CH 100V 35A TO262-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ IPI26CN10N-G is an N-Channel power MOSFET designed for high-efficiency applications. This component features a drain-source voltage (Vdss) of 100V and a continuous drain current (Id) of 35A at 25°C (Tc). The device exhibits a low on-resistance (Rds On) of 26mOhm at 35A and 10V, contributing to minimized conduction losses. With a maximum power dissipation of 71W (Tc), it is suitable for demanding thermal environments. Key parameters include a gate charge (Qg) of 31 nC (Max) @ 10V and input capacitance (Ciss) of 2070 pF (Max) @ 50V. The IPI26CN10N-G is housed in a PG-TO262-3 package with through-hole mounting. This MOSFET technology is commonly utilized in industrial power supplies, automotive systems, and renewable energy applications.
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 35A (Tc) |
| Rds On (Max) @ Id, Vgs | 26mOhm @ 35A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 71W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 39µA |
| Supplier Device Package | PG-TO262-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 31 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2070 pF @ 50 V |
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