IPI25N06S3-25
MOSFET N-CH 55V 25A TO262-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ IPI25N06S3-25 is an N-channel Power MOSFET designed for demanding power applications. This component features a drain-source voltage (Vdss) of 55V and a continuous drain current (Id) of 25A at 25°C. The device exhibits a low on-resistance (Rds On) of 25.1mOhm at 15A and 10V gate-source voltage, contributing to efficient power conversion. With a maximum power dissipation of 48W at 25°C (Tc), it is suitable for thermal management in high-power systems. The IPI25N06S3-25 is housed in a PG-TO262-3 package, facilitating through-hole mounting. Its typical applications span automotive, industrial power control, and high-efficiency switching power supplies. The gate charge (Qg) is 41 nC at 10V, and input capacitance (Ciss) is 1862 pF at 25V. The operating temperature range is -55°C to 175°C (TJ).
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 25A (Tc) |
| Rds On (Max) @ Id, Vgs | 25.1mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 48W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 20µA |
| Supplier Device Package | PG-TO262-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 41 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1862 pF @ 25 V |
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