IPI22N03S4L15AKSA1
MOSFET N-CH 30V 22A TO262-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The Infineon Technologies OptiMOS™ IPI22N03S4L15AKSA1 is an N-Channel Power MOSFET designed for high-performance applications. This component features a Drain-Source Voltage (Vdss) of 30V and supports a continuous Drain current (Id) of 22A at 25°C (Tc). With a maximum power dissipation of 31W (Tc), it exhibits a low on-resistance (Rds On) of 14.9mOhm at 22A and 10V Vgs. The device has a typical gate charge (Qg) of 14 nC at 10V Vgs and an input capacitance (Ciss) of 980 pF at 25V Vds. It operates across a wide temperature range from -55°C to 175°C (TJ). The IPI22N03S4L15AKSA1 is supplied in a PG-TO262-3 package and is suitable for through-hole mounting. This MOSFET is commonly utilized in automotive and industrial power management systems.
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 22A (Tc) |
| Rds On (Max) @ Id, Vgs | 14.9mOhm @ 22A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 31W (Tc) |
| Vgs(th) (Max) @ Id | 2.2V @ 10µA |
| Supplier Device Package | PG-TO262-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 14 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 980 pF @ 25 V |
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