IPI200N25N3GAKSA1
MOSFET N-CH 250V 64A TO262-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ N-Channel Power MOSFET, part number IPI200N25N3GAKSA1, offers a 250V drain-source voltage and 64A continuous drain current at 25°C. This MOSFET features a maximum on-resistance of 20mOhm at 64A and 10V Vgs, with a gate charge of 86 nC. The device boasts a low input capacitance of 7100 pF at 100V and a maximum power dissipation of 300W at 25°C. Designed with a PG-TO262-3 package, it is suitable for through-hole mounting. Operating temperature ranges from -55°C to 175°C. This component is utilized in power supply applications, industrial motor control, and renewable energy systems.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 64A (Tc) |
| Rds On (Max) @ Id, Vgs | 20mOhm @ 64A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 300W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 270µA |
| Supplier Device Package | PG-TO262-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 250 V |
| Gate Charge (Qg) (Max) @ Vgs | 86 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 7100 pF @ 100 V |
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