IPI147N12N3GAKSA1
MOSFET N-CH 120V 56A TO262-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies' OptiMOS™ IPI147N12N3GAKSA1 is a high-performance N-channel power MOSFET designed for demanding applications. This through-hole component features a 120V drain-source breakdown voltage and a continuous drain current capability of 56A at 25°C ambient. With a maximum on-resistance of 14.7mOhm at 56A and 10V gate-source voltage, it offers excellent conduction efficiency. The device boasts a low gate charge of 49 nC at 10V and input capacitance of 3220 pF at 60V, contributing to efficient switching characteristics. It dissipates up to 107W at 25°C case temperature and operates across a wide temperature range of -55°C to 175°C (TJ). The PG-TO262-3 package provides a robust thermal path for power dissipation. This MOSFET is suitable for use in power supply units, automotive applications, and motor control systems.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 56A (Ta) |
| Rds On (Max) @ Id, Vgs | 14.7mOhm @ 56A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 107W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 61µA |
| Supplier Device Package | PG-TO262-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 120 V |
| Gate Charge (Qg) (Max) @ Vgs | 49 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3220 pF @ 60 V |
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