IPI139N08N3GHKSA1
MOSFET N-CH 80V 45A TO262-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ IPI139N08N3GHKSA1 is an N-channel power MOSFET with a 80V drain-source voltage rating and a continuous drain current capability of 45A at 25°C (Tc). This component features a low on-resistance (Rds(on)) of 13.9mOhm at 45A and 10V Vgs. The gate charge (Qg) is specified at a maximum of 25 nC at 10V Vgs, and input capacitance (Ciss) is 1730 pF (max) at 40V Vds. Designed for through-hole mounting in a PG-TO262-3 package, it offers a maximum power dissipation of 79W (Tc). Operating temperature range is -55°C to 175°C (TJ). This MOSFET is suitable for demanding applications in power supply, automotive, and industrial sectors.
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 45A (Tc) |
| Rds On (Max) @ Id, Vgs | 13.9mOhm @ 45A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 79W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 33µA |
| Supplier Device Package | PG-TO262-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 80 V |
| Gate Charge (Qg) (Max) @ Vgs | 25 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1730 pF @ 40 V |
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