IPI12CN10N G
MOSFET N-CH 100V 67A TO262-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies presents the IPI12CN10N-G, an N-Channel Power MOSFET from the OptiMOS™ series. This component features a Drain-to-Source Voltage (Vdss) of 100V and a continuous Drain Current (Id) of 67A at 25°C (Tc). With a maximum power dissipation of 125W (Tc) and a low on-resistance (Rds On) of 12.9mOhm at 67A and 10V, it is optimized for high-efficiency power switching applications. The device utilizes advanced MOSFET technology, offering a gate charge (Qg) of 65 nC at 10V and an input capacitance (Ciss) of 4320 pF at 50V. The IPI12CN10N-G is housed in a PG-TO262-3 package, suitable for through-hole mounting, and operates across a wide temperature range of -55°C to 175°C (TJ). This component finds application in demanding sectors such as industrial power supplies and automotive systems.
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 67A (Tc) |
| Rds On (Max) @ Id, Vgs | 12.9mOhm @ 67A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 125W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 83µA |
| Supplier Device Package | PG-TO262-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 65 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4320 pF @ 50 V |
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