IPI126N10N3 G
MOSFET N-CH 100V 58A TO262-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ IPI126N10N3-G is an N-Channel Power MOSFET designed for demanding applications. This component features a drain-to-source voltage (Vdss) of 100V and a continuous drain current (Id) of 58A at 25°C (Tc). The low on-resistance (Rds On) of 12.6mOhm is achieved at 46A and 10V (Vgs). Key parameters include a gate charge (Qg) of 35nC (max) at 10V (Vgs) and input capacitance (Ciss) of 2500pF (max) at 50V (Vds). With a maximum power dissipation of 94W (Tc), this MOSFET operates within an extended temperature range of -55°C to 175°C (TJ). The device is housed in a PG-TO262-3 package with long leads, suitable for through-hole mounting. This component finds application in power management systems, automotive electronics, and industrial automation.
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 58A (Tc) |
| Rds On (Max) @ Id, Vgs | 12.6mOhm @ 46A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 94W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 46µA |
| Supplier Device Package | PG-TO262-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 35 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2500 pF @ 50 V |
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