IPI120P04P4L03AKSA1
MOSFET P-CH 40V 120A TO262-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ P-Channel Power MOSFET, part number IPI120P04P4L03AKSA1, features a 40V drain-source voltage and 120A continuous drain current at 25°C. This automotive-grade component offers a low on-resistance of 3.4mOhm at 100A and 10V Vgs, with a maximum power dissipation of 136W. The device utilizes MOSFET technology and is housed in a PG-TO262-3-1 package for through-hole mounting. Key parameters include a gate charge of 234 nC at 10V and input capacitance of 15000 pF at 25V. The operating temperature range is -55°C to 175°C. This component is suitable for demanding applications in the automotive sector.
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 120A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.4mOhm @ 100A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 136W (Tc) |
| Vgs(th) (Max) @ Id | 2.2V @ 340µA |
| Supplier Device Package | PG-TO262-3-1 |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 234 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 15000 pF @ 25 V |
| Qualification | AEC-Q101 |
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