IPI120N10S403AKSA1
MOSFET N-CH 100V 120A TO262-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies presents the IPI120N10S403AKSA1, an N-Channel Power MOSFET from the OptiMOS™ series. This component features a drain-source voltage (Vdss) of 100 V and a continuous drain current (Id) of 120 A at 25°C (Tc). The device exhibits a low on-resistance (Rds On) of 3.9 mOhm at 100 A and 10 V gate-source voltage (Vgs). With a maximum power dissipation of 250 W (Tc), it utilizes TO-262-3 long leads packaging for through-hole mounting. Key parameters include a gate charge (Qg) of 140 nC at 10 V and input capacitance (Ciss) of 10120 pF at 25 V. Designed for demanding applications, this AEC-Q101 qualified component operates within an extended temperature range of -55°C to 175°C (TJ). This MOSFET is suitable for automotive and industrial power conversion systems.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 120A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.9mOhm @ 100A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 250W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 180µA |
| Supplier Device Package | PG-TO262-3-1 |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 140 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 10120 pF @ 25 V |
| Qualification | AEC-Q101 |
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