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IPI120N08S404AKSA1

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IPI120N08S404AKSA1

MOSFET N-CH 80V 120A TO262-3

Manufacturer: Infineon Technologies

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Infineon Technologies OptiMOS™ IPI120N08S404AKSA1 is an N-channel power MOSFET designed for demanding applications. This component features a drain-source voltage (Vdss) of 80V and a continuous drain current (Id) rating of 120A at 25°C (Tc). The device exhibits a low on-resistance (Rds On) of 4.4mOhm maximum at 100A and 10V gate-source voltage. Key specifications include a gate charge (Qg) of 95 nC (max) at 10V and input capacitance (Ciss) of 6450 pF (max) at 25V. The power dissipation is rated at 179W (Tc). Engineered with advanced MOSFET technology, this component is qualified to AEC-Q101 standards, making it suitable for automotive applications. The IPI120N08S404AKSA1 is packaged in a PG-TO262-3-1 (TO-262-3 Long Leads, I2PAK, TO-262AA) configuration for through-hole mounting, operating within a temperature range of -55°C to 175°C (TJ).

Additional Information

Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-262-3 Long Leads, I2PAK, TO-262AA
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C120A (Tc)
Rds On (Max) @ Id, Vgs4.4mOhm @ 100A, 10V
FET Feature-
Power Dissipation (Max)179W (Tc)
Vgs(th) (Max) @ Id4V @ 120µA
Supplier Device PackagePG-TO262-3-1
GradeAutomotive
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)80 V
Gate Charge (Qg) (Max) @ Vgs95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds6450 pF @ 25 V
QualificationAEC-Q101

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