IPI120N08S403AKSA1
MOSFET N-CH 80V 120A TO262-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies OptiMOS™ IPI120N08S403AKSA1 is an N-Channel Power MOSFET designed for demanding applications. This component features an 80V drain-source voltage (Vdss) and a continuous drain current (Id) of 120A at 25°C (Tc). The low on-resistance (Rds On) of 2.8mOhm at 100A and 10V drive voltage, coupled with a maximum power dissipation of 278W (Tc), makes it suitable for high-power switching and power management solutions. Key parameters include a gate charge (Qg) of 167 nC at 10V and input capacitance (Ciss) of 11550 pF at 25V. The device is qualified to AEC-Q101 standards, indicating its suitability for automotive applications. It is packaged in a PG-TO262-3-1 (TO-262-3 Long Leads, I2PAK, TO-262AA) and supports through-hole mounting. The operating temperature range is -55°C to 175°C (TJ).
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 120A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.8mOhm @ 100A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 278W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 223µA |
| Supplier Device Package | PG-TO262-3-1 |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 80 V |
| Gate Charge (Qg) (Max) @ Vgs | 167 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 11550 pF @ 25 V |
| Qualification | AEC-Q101 |
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