IPI120N06S402AKSA2
MOSFET N-CH 60V 120A TO262-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ IPI120N06S402AKSA2 is a 60V N-Channel Power MOSFET designed for high-current applications. This component features a continuous drain current capability of 120A (Tc) and a maximum power dissipation of 188W (Tc), making it suitable for demanding power conversion and management tasks. The device offers a low on-resistance of 2.8mOhm at 100A and 10V, minimizing conduction losses. With a gate charge of 195 nC at 10V and input capacitance of 15750 pF at 25V, it supports efficient switching performance. The IPI120N06S402AKSA2 is housed in a PG-TO262-3-1 package with through-hole mounting, and operates within an industrial temperature range of -55°C to 175°C. This MOSFET is widely utilized in automotive, industrial power supplies, and high-power motor control systems.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 120A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.8mOhm @ 100A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 188W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 140µA |
| Supplier Device Package | PG-TO262-3-1 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 195 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 15750 pF @ 25 V |
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