IPI120N04S302AKSA1
MOSFET N-CH 40V 120A TO262-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ IPI120N04S302AKSA1 is a 40V N-channel power MOSFET housed in a PG-TO262-3 package. This component offers a continuous drain current capability of 120A at 25°C (Tc) and a maximum power dissipation of 300W (Tc). Key electrical characteristics include a low Rds(on) of 2.3mOhm at 80A and 10V drive, with a gate charge (Qg) of 210 nC at 10V. The input capacitance (Ciss) is 14300 pF maximum at 25V. Operating across a wide temperature range of -55°C to 175°C (TJ), this MOSFET is suitable for applications in automotive and industrial power systems requiring efficient switching and robust performance.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 12 week(s)Product Status: Not For New DesignsPackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 120A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.3mOhm @ 80A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 300W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 230µA |
| Supplier Device Package | PG-TO262-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 210 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 14300 pF @ 25 V |
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