IPI110N20N3GAKSA1
MOSFET N-CH 200V 88A TO262-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ series IPI110N20N3GAKSA1 is an N-channel power MOSFET designed for high-efficiency applications. This component features a 200V drain-source breakdown voltage (Vdss) and a continuous drain current capability of 88A at 25°C (Tc). The device exhibits a low on-resistance (Rds On) of 11mOhm at 88A and 10V gate-source voltage (Vgs), contributing to reduced conduction losses. With a maximum power dissipation of 300W (Tc), it is suitable for demanding power conversion tasks. Key parameters include a gate charge (Qg) of 87 nC (Max) at 10V and input capacitance (Ciss) of 7100 pF (Max) at 100V. The IPI110N20N3GAKSA1 is housed in a PG-TO262-3 package with long leads, facilitating through-hole mounting. Operating temperature range is from -55°C to 175°C (TJ). This MOSFET is utilized across various industries including industrial power supplies, automotive electronics, and renewable energy systems.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 88A (Tc) |
| Rds On (Max) @ Id, Vgs | 11mOhm @ 88A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 300W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 270µA |
| Supplier Device Package | PG-TO262-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 87 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 7100 pF @ 100 V |