IPI100P03P3L-04
MOSFET P-CH 30V 100A TO262-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies OptiMOS™ IPI100P03P3L-04 is a P-channel power MOSFET designed for high-performance applications. This device features a drain-source voltage (Vdss) of 30V and a continuous drain current (Id) capability of 100A at 25°C (Tc). The low on-resistance (Rds On) is rated at a maximum of 4.3mOhm at 80A and 10V gate-source voltage. The MOSFET exhibits a maximum power dissipation of 200W (Tc) and is housed in a PG-TO262-3 package, suitable for through-hole mounting. Key parameters include a gate charge (Qg) of 200 nC at 10V and input capacitance (Ciss) of 9300 pF at 25V. The device operates across an extended temperature range of -55°C to 175°C (TJ). This component is frequently utilized in automotive, industrial power control, and general-purpose switching applications.
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.3mOhm @ 80A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 200W (Tc) |
| Vgs(th) (Max) @ Id | 2.1V @ 475µA |
| Supplier Device Package | PG-TO262-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | +5V, -16V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 200 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 9300 pF @ 25 V |
Request a Quote
Clients Also Buy
BSS308PEH6327XTSA1
MOSFET P-CH 30V 2A SOT23-3
BSZ086P03NS3EGATMA1
MOSFET P-CH 30V 13.5A/40A TSDSON
BSL606SNH6327XTSA1
MOSFET N-CH 60V 4.5A TSOP-6
