IPI100N10S305AKSA1
MOSFET N-CH 100V 100A TO262-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies' OptiMOS™ IPI100N10S305AKSA1 is an N-Channel Power MOSFET designed for high-efficiency power conversion. Featuring a drain-source voltage (Vdss) of 100V and a continuous drain current (Id) of 100A at 25°C (Tc), this component offers a low on-resistance (Rds On) of 5.1mOhm at 100A and 10V gate-source voltage. The device boasts a maximum power dissipation of 300W (Tc) and a low gate charge (Qg) of 176nC at 10V. Its input capacitance (Ciss) is 11570pF at 25V. Packaged in a PG-TO262-3 (TO-262-3 Long Leads, I2PAK, TO-262AA) for through-hole mounting, it operates across a wide temperature range of -55°C to 175°C (TJ). This MOSFET is suitable for demanding applications in automotive, industrial, and power supply sectors.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
| Rds On (Max) @ Id, Vgs | 5.1mOhm @ 100A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 300W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 240µA |
| Supplier Device Package | PG-TO262-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 176 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 11570 pF @ 25 V |
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