IPI100N08N3GHKSA1
MOSFET N-CH 80V 70A TO262-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies OptiMOS™ IPI100N08N3GHKSA1 is an N-Channel Power MOSFET designed for demanding applications. This device features a drain-source voltage (Vdss) of 80 V and a continuous drain current (Id) of 70 A at 25°C, with a maximum power dissipation of 100 W. The Rds On is optimized at 10 mOhm at 46 A and 10 V. Key parameters include a gate charge (Qg) of 35 nC at 10 V and input capacitance (Ciss) of 2410 pF at 40 V. The device utilizes MOSFET technology and is packaged in a PG-TO262-3 configuration for through-hole mounting. Operating temperature range is -55°C to 175°C (TJ). This component is suitable for use in automotive and industrial power management systems.
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 70A (Tc) |
| Rds On (Max) @ Id, Vgs | 10mOhm @ 46A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 100W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 46µA |
| Supplier Device Package | PG-TO262-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 80 V |
| Gate Charge (Qg) (Max) @ Vgs | 35 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2410 pF @ 40 V |
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