IPI100N06S3L-03
MOSFET N-CH 55V 100A TO262-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies OptiMOS™ N-Channel Power MOSFET, part number IPI100N06S3L-03, offers a 55V drain-source voltage and a continuous drain current of 100A at 25°C. This device features a low on-resistance of 3mOhm at 80A and 10V Vgs, with a maximum power dissipation of 300W. The gate charge is specified at 550 nC at 10V, and input capacitance is 26240 pF at 25V. Packaged in a PG-TO262-3 with long leads, the IPI100N06S3L-03 is suitable for through-hole mounting and operates across a temperature range of -55°C to 175°C. This component is utilized in applications such as power supplies, automotive systems, and industrial motor control.
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
| Rds On (Max) @ Id, Vgs | 3mOhm @ 80A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 300W (Tc) |
| Vgs(th) (Max) @ Id | 2.2V @ 230µA |
| Supplier Device Package | PG-TO262-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 550 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 26240 pF @ 25 V |
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