IPI100N04S4H2AKSA1
MOSFET N-CH 40V 100A TO262-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies presents the IPI100N04S4H2AKSA1, an N-Channel Power MOSFET from the OptiMOS™ series. This component offers a Drain-to-Source Voltage (Vdss) of 40V and a continuous Drain Current (Id) of 100A at 25°C (Tc), with a maximum power dissipation of 115W (Tc). Key specifications include a low on-resistance of 2.7mOhm at 100A and 10V, a Gate Charge (Qg) of 90 nC maximum at 10V, and Input Capacitance (Ciss) of 7180 pF maximum at 25V. The device operates within a temperature range of -55°C to 175°C (TJ). Packaged in a PG-TO262-3 (TO-262-3 Long Leads, I2PAK, TO-262AA) with through-hole mounting, this MOSFET is suitable for applications in automotive and industrial power management.
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.7mOhm @ 100A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 115W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 70µA |
| Supplier Device Package | PG-TO262-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 90 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 7180 pF @ 25 V |
Request a Quote
Clients Also Buy
BSS308PEH6327XTSA1
MOSFET P-CH 30V 2A SOT23-3
BSZ086P03NS3EGATMA1
MOSFET P-CH 30V 13.5A/40A TSDSON
BSL606SNH6327XTSA1
MOSFET N-CH 60V 4.5A TSOP-6
