IPI09N03LA
MOSFET N-CH 25V 50A TO262-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ N-Channel Power MOSFET, part number IPI09N03LA. This 25V device features a continuous drain current of 50A (Tc) and a maximum power dissipation of 63W (Tc). Optimized for high performance, it offers a low on-resistance of 9.2mOhm at 30A, 10V, and a gate charge of 13 nC at 5V. The input capacitance (Ciss) is 1642 pF at 15V. Packaged in a PG-TO262-3 (TO-262-3 Long Leads, I2PAK, TO-262AA) with a through-hole mounting type, this MOSFET operates across a wide temperature range of -55°C to 175°C (TJ). Applications include automotive, industrial power control, and power supply designs.
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 50A (Tc) |
| Rds On (Max) @ Id, Vgs | 9.2mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 63W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 20µA |
| Supplier Device Package | PG-TO262-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 25 V |
| Gate Charge (Qg) (Max) @ Vgs | 13 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1642 pF @ 15 V |
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