IPI084N06L3GXKSA1
MOSFET N-CH 60V 50A TO262-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies OptiMOS™ series N-Channel Power MOSFET, part number IPI084N06L3GXKSA1. This device features a 60V drain-source voltage and a continuous drain current of 50A at 25°C (Tc). The IPI084N06L3GXKSA1 offers a low on-resistance of 8.4mOhm maximum at 50A and 10V Vgs. It is designed with a PG-TO262-3-1 package for through-hole mounting, supporting up to 79W of power dissipation at 25°C (Tc). Key parameters include a gate charge of 29 nC at 4.5V and input capacitance of 4900 pF at 30V. Operating temperature range is -55°C to 175°C (TJ). This component is suitable for various industrial applications including power supplies and motor control.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 50A (Tc) |
| Rds On (Max) @ Id, Vgs | 8.4mOhm @ 50A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 79W (Tc) |
| Vgs(th) (Max) @ Id | 2.2V @ 34µA |
| Supplier Device Package | PG-TO262-3-1 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 29 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4900 pF @ 30 V |
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