IPI075N15N3GHKSA1
MOSFET N-CH 150V 100A TO262-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ IPI075N15N3GHKSA1 is a high-performance N-Channel Power MOSFET designed for demanding applications. Featuring a 150V drain-source voltage (Vdss) and a continuous drain current of 100A at 25°C (Tc), this component offers a low on-resistance (Rds On) of 7.5mOhm at 100A and 10V. With a maximum power dissipation of 300W (Tc), it is suitable for high-power switching and conversion tasks. The device utilizes advanced MOSFET technology and is housed in a PG-TO262-3 package, facilitating through-hole mounting. Key electrical characteristics include a gate charge (Qg) of 93nC at 10V and input capacitance (Ciss) of 5470pF at 75V. Operating temperature ranges from -55°C to 175°C (TJ). This MOSFET is frequently employed in industrial power supplies, automotive applications, and electric vehicle charging infrastructure.
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
| Rds On (Max) @ Id, Vgs | 7.5mOhm @ 100A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 300W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 270µA |
| Supplier Device Package | PG-TO262-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 8V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 150 V |
| Gate Charge (Qg) (Max) @ Vgs | 93 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5470 pF @ 75 V |
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