IPI072N10N3GXKSA1
MOSFET N-CH 100V 80A TO262-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ IPI072N10N3GXKSA1 is an N-Channel Power MOSFET designed for demanding applications. This through-hole component features a 100V drain-source voltage (Vdss) and a continuous drain current capability of 80A at 25°C (Tc). The device exhibits a low on-resistance (Rds On) of 7.2mOhm at 80A and 10V, with a maximum power dissipation of 150W (Tc). Key parameters include a gate charge (Qg) of 68 nC (max) at 10V and input capacitance (Ciss) of 4910 pF (max) at 50V. The component operates across a wide temperature range of -55°C to 175°C (TJ) and is housed in a PG-TO262-3 package. This device is suitable for use in industrial power supplies and server applications.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 7.2mOhm @ 80A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 150W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 90µA |
| Supplier Device Package | PG-TO262-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 68 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4910 pF @ 50 V |
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