IPI06N03LA
MOSFET N-CH 25V 50A TO262-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ IPI06N03LA is an N-Channel Power MOSFET designed for demanding applications. This device features a Drain-to-Source Voltage (Vdss) of 25 V and a continuous Drain Current (Id) of 50 A at 25°C (Tc), with a maximum power dissipation of 83 W (Tc). The low on-resistance is specified as 6.2 mOhm maximum at 30 A and 10 V Vgs. Key parameters include a Gate Charge (Qg) of 22 nC maximum at 5 V Vgs and an Input Capacitance (Ciss) of 2653 pF maximum at 15 V Vds. It operates with a gate drive voltage range of 4.5 V to 10 V and has a maximum Vgs of ±20V. The threshold voltage (Vgs(th)) is 2 V maximum at 40 µA. This component is housed in a PG-TO262-3 package with through-hole mounting, suitable for operation between -55°C and 175°C. Typical applications include high-efficiency power conversion and motor control systems across various industrial sectors.
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 50A (Tc) |
| Rds On (Max) @ Id, Vgs | 6.2mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 83W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 40µA |
| Supplier Device Package | PG-TO262-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 25 V |
| Gate Charge (Qg) (Max) @ Vgs | 22 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2653 pF @ 15 V |
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