IPI06CN10N G
MOSFET N-CH 100V 100A TO262-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies OptiMOS™ series N-Channel Power MOSFET, part number IPI06CN10N-G. This through-hole device features a 100V drain-source voltage (Vdss) and a continuous drain current (Id) of 100A at 25°C (Tc). The Rds(on) is specified at a maximum of 6.5mOhm at 100A and 10V gate-source voltage (Vgs). Key parameters include a gate charge (Qg) of 139 nC at 10V and an input capacitance (Ciss) of 9200 pF at 50V. Maximum power dissipation is 214W (Tc) with an operating temperature range of -55°C to 175°C (TJ). The device is supplied in a PG-TO262-3 package. This MOSFET is suitable for applications in power supply units and industrial motor control.
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
| Rds On (Max) @ Id, Vgs | 6.5mOhm @ 100A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 214W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 180µA |
| Supplier Device Package | PG-TO262-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 139 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 9200 pF @ 50 V |
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