IPI057N08N3 G
MOSFET N-CH 80V 80A TO262-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ series N-channel power MOSFET, part number IPI057N08N3-G. This component features 80 V drain-to-source voltage and 80 A continuous drain current at 25°C. With a maximum on-resistance of 5.7 mOhm at 80 A and 10 V Vgs, it offers low conduction losses. The device is rated for 150 W power dissipation at 25°C and operates across a temperature range of -55°C to 175°C. Key parameters include gate charge (Qg) of 69 nC at 10 V and input capacitance (Ciss) of 4750 pF at 40 V. It utilizes a PG-TO262-3 package with through-hole mounting. This MOSFET is suitable for applications in power supplies, automotive electronics, and industrial motor control.
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 5.7mOhm @ 80A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 150W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 90µA |
| Supplier Device Package | PG-TO262-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 80 V |
| Gate Charge (Qg) (Max) @ Vgs | 69 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4750 pF @ 40 V |
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