IPI04N03LA
MOSFET N-CH 25V 80A TO262-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ IPI04N03LA is a 25V N-Channel power MOSFET designed for high-performance applications. This component features a continuous drain current of 80A (Tc) at 25°C and a maximum power dissipation of 107W (Tc). The low on-resistance of 4.2mOhm at 55A and 10V (Vgs) ensures efficient power transfer. Key electrical parameters include a drain-source voltage (Vdss) of 25V, gate charge (Qg) of 32 nC (max) at 5V, and input capacitance (Ciss) of 3877 pF (max) at 15V. The device supports a wide gate-source voltage range from 4.5V to 10V for optimal on-resistance. Operating across a temperature range of -55°C to 175°C (TJ), the IPI04N03LA is housed in a PG-TO262-3 package, suitable for through-hole mounting. This MOSFET is commonly utilized in automotive, industrial power supplies, and motor control systems.
Additional Information
Series: Optimos™RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.2mOhm @ 55A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 107W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 60µA |
| Supplier Device Package | PG-TO262-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 25 V |
| Gate Charge (Qg) (Max) @ Vgs | 32 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3877 pF @ 15 V |
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