IPI045N10N3GXK
MOSFET N-CH 100V 137A TO262-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies OptiMOS™ 3 N-Channel Power MOSFET, part number IPI045N10N3GXK, offers a 100V drain-to-source voltage with a continuous drain current of 137A at 25°C (Tc). This through-hole component, packaged in a PG-TO262-3, features a low on-resistance of 4.5mOhm maximum at 100A and 10V Vgs. Its robust design supports a maximum power dissipation of 214W (Tc) and operates across a temperature range of -55°C to 175°C (TJ). Key parameters include a gate charge of 117 nC at 10V Vgs and input capacitance of 8410 pF at 50V Vds. This MOSFET is suitable for demanding applications in the automotive and industrial sectors.
Additional Information
Series: OptiMOS™ 3RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 137A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.5mOhm @ 100A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 214W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 150µA |
| Supplier Device Package | PG-TO262-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 117 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 8410 pF @ 50 V |
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