IPI040N06N3GHKSA1
MOSFET N-CH 60V 90A TO262-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies OptiMOS™ N-Channel Power MOSFET, part number IPI040N06N3GHKSA1, offers a 60V drain-source voltage and a continuous drain current of 90A at 25°C (Tc). This device features a low on-resistance of 4mOhm maximum at 90A, 10V, enabled by its advanced MOSFET technology. With a power dissipation of 188W (Tc) and a maximum junction temperature of 175°C, it is suitable for demanding applications. The PG-TO262-3 package with long leads ensures robust thermal performance and ease of through-hole mounting. Key parameters include a gate charge of 98nC (max) at 10V and input capacitance of 11000pF (max) at 30V. This component is utilized in power supply units, automotive applications, and industrial automation.
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 90A (Tc) |
| Rds On (Max) @ Id, Vgs | 4mOhm @ 90A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 188W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 90µA |
| Supplier Device Package | PG-TO262-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 98 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 11000 pF @ 30 V |
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