IPI037N08N3GXKSA1
MOSFET N-CH 80V 100A TO262-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies' OptiMOS™ series N-channel power MOSFET, part number IPI037N08N3GXKSA1, offers robust performance with a 80 V drain-source voltage and a continuous drain current of 100 A at 25°C. This device features a low on-resistance of 3.75 mOhm at 100 A and 10 V Vgs, complemented by a maximum power dissipation of 214 W. The N-channel enhancement mode MOSFET utilizes Metal Oxide technology and is housed in a PG-TO262-3 package with long leads, suitable for through-hole mounting. Key electrical characteristics include a gate charge (Qg) of 117 nC at 10 V and input capacitance (Ciss) of 8110 pF at 40 V. Operating temperature ranges from -55°C to 175°C. This component is commonly utilized in automotive and industrial power supply applications.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.75mOhm @ 100A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 214W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 155µA |
| Supplier Device Package | PG-TO262-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 80 V |
| Gate Charge (Qg) (Max) @ Vgs | 117 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 8110 pF @ 40 V |
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