IPI034NE7N3 G
MOSFET N-CH 75V 100A TO262-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies OptiMOS™ IPI034NE7N3-G is an N-Channel Power MOSFET designed for high-current applications. This component features a drain-source voltage (Vdss) of 75V and a continuous drain current (Id) of 100A at 25°C (Tc), with a maximum power dissipation of 214W (Tc). The Rds(On) is specified at 3.4mOhm maximum at 100A and 10V gate-source voltage. Key parameters include a gate charge (Qg) of 117 nC (max) at 10V and an input capacitance (Ciss) of 8130 pF (max) at 37.5V. The device is housed in a PG-TO262-3 package, suitable for through-hole mounting. Operating junction temperature range is -55°C to 175°C. This MOSFET is commonly utilized in automotive and industrial power electronics systems.
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.4mOhm @ 100A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 214W (Tc) |
| Vgs(th) (Max) @ Id | 3.8V @ 155µA |
| Supplier Device Package | PG-TO262-3 |
| Drain to Source Voltage (Vdss) | 75 V |
| Gate Charge (Qg) (Max) @ Vgs | 117 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 8130 pF @ 37.5 V |
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