IPI032N06N3GAKSA1
MOSFET N-CH 60V 120A TO262-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The Infineon Technologies IPI032N06N3GAKSA1 is an N-Channel Power MOSFET from the OptiMOS™ series, featuring a 60V drain-source breakdown voltage. This component offers a continuous drain current capability of 120A at 25°C (Tc) and a maximum power dissipation of 188W (Tc). Its low on-resistance is specified at 3.2mOhm at 100A and 10V gate drive. Key parameters include a gate charge (Qg) of 165 nC at 10V and input capacitance (Ciss) of 13000 pF at 30V. The IPI032N06N3GAKSA1 is housed in a PG-TO262-3 package with long leads, suitable for through-hole mounting. It operates across a temperature range of -55°C to 175°C (TJ). This MOSFET is utilized in applications such as power management, industrial motor drives, and automotive electronics.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 120A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.2mOhm @ 100A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 188W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 118µA |
| Supplier Device Package | PG-TO262-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 165 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 13000 pF @ 30 V |
Request a Quote
Clients Also Buy
BSS308PEH6327XTSA1
MOSFET P-CH 30V 2A SOT23-3
BSZ086P03NS3EGATMA1
MOSFET P-CH 30V 13.5A/40A TSDSON
BSL606SNH6327XTSA1
MOSFET N-CH 60V 4.5A TSOP-6
