IPI032N06N3 G
MOSFET N-CH 60V 120A TO262-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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The Infineon Technologies IPI032N06N3-G is an N-Channel Power MOSFET from the OptiMOS™ series. This component features a 60V drain-source breakdown voltage and a continuous drain current capability of 120A at 25°C. Its low on-resistance is specified as a maximum of 3.2mOhm at 100A and 10V gate-source voltage. With a maximum power dissipation of 188W at the case temperature, the device is housed in a PG-TO262-3 package, suitable for through-hole mounting. Key parameters include a gate charge of 165nC at 10V and input capacitance of 13000pF at 30V. This MOSFET is designed for applications requiring high efficiency and robust performance, commonly found in automotive power systems, industrial motor control, and power supply units. The operating temperature range is -55°C to 175°C (TJ).
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 120A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.2mOhm @ 100A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 188W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 118µA |
| Supplier Device Package | PG-TO262-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 165 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 13000 pF @ 30 V |
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