IPI030N10N3GXKSA1
MOSFET N-CH 100V 100A TO262-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ N-Channel Power MOSFET, part number IPI030N10N3GXKSA1, is designed for high-efficiency power conversion. This device features a 100V drain-source voltage and a continuous drain current capability of 100A at 25°C (Tc), with a maximum power dissipation of 300W (Tc). The low on-resistance, specified at 3mOhm maximum at 100A and 10V Vgs, minimizes conduction losses. Key parameters include a gate charge (Qg) of 206 nC (max) at 10V and input capacitance (Ciss) of 14800 pF (max) at 50V. The MOSFET is housed in a PG-TO262-3 package and supports through-hole mounting. Operating temperature ranges from -55°C to 175°C (TJ). This component finds application in various industrial power management systems.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
| Rds On (Max) @ Id, Vgs | 3mOhm @ 100A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 300W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 275µA |
| Supplier Device Package | PG-TO262-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 206 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 14800 pF @ 50 V |
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