IPI030N10N3GHKSA1
MOSFET N-CH 100V 100A TO262-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies OptiMOS™ MOSFET N-Channel, part number IPI030N10N3GHKSA1, features a 100V drain-source voltage and 100A continuous drain current at 25°C (Tc). This high-efficiency power MOSFET offers a maximum on-resistance of 3mOhm at 100A and 10V Vgs. The device has a 300W power dissipation rating (Tc) and is housed in a PG-TO262-3 package with long leads. Key parameters include a gate charge of 206 nC @ 10V and input capacitance of 14800 pF @ 50V. Designed for robust performance in demanding applications, it operates across a wide temperature range of -55°C to 175°C (TJ). Suitable for power management, automotive, and industrial automation sectors.
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
| Rds On (Max) @ Id, Vgs | 3mOhm @ 100A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 300W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 275µA |
| Supplier Device Package | PG-TO262-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 206 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 14800 pF @ 50 V |
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