IPI024N06N3GXKSA1
MOSFET N-CH 60V 120A TO262-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ N-Channel Power MOSFET, part number IPI024N06N3GXKSA1, is designed for high-performance power switching applications. This device features a 60V drain-source breakdown voltage and offers a continuous drain current capability of 120A at 25°C (Tc), with a maximum power dissipation of 250W (Tc). The Rds(on) is minimized to 2.4mOhm at 100A and 10V gate drive, ensuring efficient operation. Key parameters include a gate charge (Qg) of 275 nC at 10V and input capacitance (Ciss) of 23000 pF at 30V. The MOSFET is housed in a PG-TO262-3-1 package, suitable for through-hole mounting and operating across a temperature range of -55°C to 175°C (TJ). This component is widely utilized in automotive and industrial power supply designs.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 20 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 120A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.4mOhm @ 100A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 250W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 196µA |
| Supplier Device Package | PG-TO262-3-1 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 275 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 23000 pF @ 30 V |
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