IPI024N06N3GHKSA1
MOSFET N-CH 60V 120A TO262-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies OptiMOS™ series IPI024N06N3GHKSA1 is an N-Channel Power MOSFET designed for high-performance applications. This device features a drain-source voltage (Vdss) of 60V and a continuous drain current (Id) of 120A at 25°C (Tc). The extremely low on-resistance (Rds On) of 2.4mOhm at 100A and 10V ensures minimal conduction losses. With a maximum power dissipation of 250W (Tc), this MOSFET is suitable for demanding power conversion tasks. Key parameters include gate charge (Qg) of 275 nC at 10V and input capacitance (Ciss) of 23000 pF at 30V. The device operates within an extended temperature range of -55°C to 175°C (TJ). Packaged in a TO-262-3 (PG-TO262-3) with long leads, it is ideal for through-hole mounting. This component is commonly found in automotive, industrial power supply, and renewable energy systems.
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 120A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.4mOhm @ 100A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 250W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 196µA |
| Supplier Device Package | PG-TO262-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 275 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 23000 pF @ 30 V |
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