IPI023NE7N3 G
MOSFET N-CH 75V 120A TO262-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ IPI023NE7N3-G is a 75V N-Channel power MOSFET. This through-hole component features a low Rds(on) of 2.3mOhm at 100A and 10V, ensuring high efficiency in demanding power conversion applications. With a continuous drain current capability of 120A (Tc) and a maximum power dissipation of 300W (Tc), it is suitable for high-power systems. Key parameters include a Vgs(th) of 3.8V (max) and a gate charge of 206 nC (max). The TO-262-3 package provides robust thermal performance. This MOSFET is commonly utilized in automotive, industrial power supplies, and electric vehicle charging infrastructure.
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 120A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.3mOhm @ 100A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 300W (Tc) |
| Vgs(th) (Max) @ Id | 3.8V @ 273µA |
| Supplier Device Package | PG-TO262-3 |
| Drain to Source Voltage (Vdss) | 75 V |
| Gate Charge (Qg) (Max) @ Vgs | 206 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 14400 pF @ 37.5 V |
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