IPI020N06NAKSA1
MOSFET N-CH 60V 29A/120A TO262Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ IPI020N06NAKSA1 is an N-Channel Power MOSFET designed for high-performance applications. This through-hole component features a drain-source voltage (Vds) of 60V and a continuous drain current (Id) of 29A at 25°C ambient temperature, scaling to 120A at 25°C case temperature. The device exhibits a low on-resistance (Rds On) of 2mOhm maximum at 100A and 10V Vgs. Key parameters include a gate charge (Qg) of 106 nC maximum at 10V Vgs and input capacitance (Ciss) of 7800 pF maximum at 30V Vds. With a maximum power dissipation of 3W (ambient) and 214W (case), the IPI020N06NAKSA1 operates across a temperature range of -55°C to 175°C (TJ). This MOSFET is suitable for use in automotive and industrial power management systems. The component is supplied in a PG-TO262-3-1 package.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 29A (Ta), 120A (Tc) |
| Rds On (Max) @ Id, Vgs | 2mOhm @ 100A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3W (Ta), 214W (Tc) |
| Vgs(th) (Max) @ Id | 2.8V @ 143µA |
| Supplier Device Package | PG-TO262-3-1 |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 106 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 7800 pF @ 30 V |
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