IPF13N03LA G
MOSFET N-CH 25V 30A TO252-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies OptiMOS™ IPF13N03LA-G is an N-Channel power MOSFET designed for efficient switching applications. This device features a Drain-Source Voltage (Vdss) of 25V and a continuous Drain Current (Id) of 30A (Tc) at 25°C. The Rds(on) is specified at a maximum of 12.8mOhm at 30A and 10V Vgs. The total gate charge (Qg) is 8.3 nC maximum at 5V Vgs, and the input capacitance (Ciss) is 1043 pF maximum at 15V Vds. The device is packaged in a PG-TO252-3-23 (DPAK) surface-mount package, suitable for automated assembly. With a maximum power dissipation of 46W (Tc) and an operating temperature range of -55°C to 175°C (TJ), this MOSFET is engineered for demanding power management solutions in automotive and industrial sectors.
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 30A (Tc) |
| Rds On (Max) @ Id, Vgs | 12.8mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 46W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 20µA |
| Supplier Device Package | PG-TO252-3-23 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 25 V |
| Gate Charge (Qg) (Max) @ Vgs | 8.3 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1043 pF @ 15 V |
Request a Quote
Clients Also Buy
BSS308PEH6327XTSA1
MOSFET P-CH 30V 2A SOT23-3
BSZ086P03NS3EGATMA1
MOSFET P-CH 30V 13.5A/40A TSDSON
BSL606SNH6327XTSA1
MOSFET N-CH 60V 4.5A TSOP-6
