IPF09N03LA
MOSFET N-CH 25V 50A TO252-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ IPF09N03LA is a 25 V N-Channel power MOSFET in a PG-TO252-3-23 package. This surface mount device features a low Rds(on) of 8.6 mOhm at 30A and 10V Vgs, with a continuous drain current capability of 50A (Tc). The device offers a maximum power dissipation of 63W (Tc) and a gate charge of 13 nC at 5V Vgs. Input capacitance (Ciss) is 1642 pF at 15V Vds. Operating temperature range is -55°C to 175°C (TJ). This component is suitable for applications in automotive and industrial power management. This part is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: Optimos™RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 50A (Tc) |
| Rds On (Max) @ Id, Vgs | 8.6mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 63W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 20µA |
| Supplier Device Package | PG-TO252-3-23 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 25 V |
| Gate Charge (Qg) (Max) @ Vgs | 13 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1642 pF @ 15 V |
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