IPF05N03LA G
MOSFET N-CH 25V 50A TO252-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ IPF05N03LA-G is a 25V N-Channel Power MOSFET. This device features a low on-resistance of 5.1mOhm at 30A and 10V Vgs, enabling high efficiency power conversion. It offers a continuous drain current of 50A (Tc) and a maximum power dissipation of 94W (Tc). The IPF05N03LA-G is designed for surface mounting within a PG-TO252-3-23 package. Key electrical parameters include a Gate Charge (Qg) of 25 nC @ 5 V and Input Capacitance (Ciss) of 3110 pF @ 15 V. Operating temperature range is from -55°C to 175°C (TJ). This component is suitable for applications in automotive and industrial power management.
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 50A (Tc) |
| Rds On (Max) @ Id, Vgs | 5.1mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 94W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 50µA |
| Supplier Device Package | PG-TO252-3-23 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 25 V |
| Gate Charge (Qg) (Max) @ Vgs | 25 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3110 pF @ 15 V |
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